SI5903DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.1W

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.155Ohm

Rds On (Max) @ Id, Vgs :

155m Ω @ 2.1A, 4.5V

Number of Elements :

2

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

13 ns

DS Breakdown Voltage-Min :

20V

Number of Pins :

8

Fall Time (Typ) :

25 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

2.1A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

SI5903

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Turn-Off Delay Time :

25 ns

Pin Count :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

PURE MATTE TIN

Number of Terminations :

8