RGTH00TS65DGC13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

277W

Gate Charge :

94 nC

Series :

-

Package / Case :

TO-247-3

Packaging :

Tube

Input Type :

Standard

Product Type :

IGBT Transistors

Subcategory :

IGBTs

Product Category :

IGBT Transistors

Reverse Recovery Time (trr) :

54 ns

Minimum Operating Temperature :

- 40 C

Manufacturer :

Rohm Semiconductor

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Product Status :

Active

Maximum Operating Temperature :

+ 175 C

Technology :

Si

Voltage - Collector Emitter Breakdown (Max) :

650 V

Power - Max :

277 W

Switching Energy :

-

Operating Temperature :

-40°C ~ 175°C (TJ)

IGBT Type :

Trench Field Stop

Current - Collector Pulsed (Icm) :

200 A

Collector Emitter Saturation Voltage :

1.6V

Mounting Type :

Through Hole

RoHS :

Details

Continuous Collector Current :

85A

Test Condition :

400V, 50A, 10Ohm, 15V

Mounting Style :

Through Hole

Package :

Tube

Supplier Device Package :

TO-247G

Td (on/off) @ 25°C :

39ns/143ns

Current - Collector (Ic) (Max) :

85 A

Brand :

Rohm Semiconductor

Configuration :

Single Collector, Single Emitter, Single Gate

Package Type :

TO-247GE