RGTH40TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

80A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~175°C TJ

Gate Charge :

40nC

Packaging :

Tube

Td (on/off) @ 25°C :

22ns/73ns

Turn On Time :

47 ns

Transistor Element Material :

SILICON

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.6V

Max Power Dissipation :

144W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Number of Terminations :

3

Number of Elements :

1

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

Number of Pins :

3

Package / Case :

TO-247-3

REACH SVHC :

Unknown

Reverse Recovery Time :

58 ns

Test Condition :

400V, 20A, 10 Ω, 15V

IGBT Type :

Trench Field Stop

Power - Max :

144W

Turn Off Time-Nom (toff) :

141 ns

Input Type :

Standard

Pbfree Code :

yes

Continuous Collector Current :

20A

Factory Lead Time :

17 Weeks

Polarity/Channel Type :

N-Channel

Max Collector Current :

40A

Collector Emitter Breakdown Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

38.000013g

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

650V