RGTH00TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

200A

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

39ns/143ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Test Condition :

400V, 50A, 10 Ω, 15V

Turn Off Time-Nom (toff) :

221 ns

Terminal Position :

Single

Turn On Time :

102 ns

Factory Lead Time :

17 Weeks

Voltage - Collector Emitter Breakdown (Max) :

650V

Transistor Element Material :

SILICON

Number of Elements :

1

IGBT Type :

Trench Field Stop

Current - Collector (Ic) (Max) :

35A

Operating Temperature :

-40°C~175°C TJ

Surface Mount :

No

Mounting Type :

Through Hole

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Reverse Recovery Time :

225ns

Power - Max :

72W

Gate Charge :

94nC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3PFM, SC-93-3