PEMB2,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Polarity :

PNP

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Collector Current :

100mA

Power Dissipation :

300mW

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Radiation Hardening :

No

Base Part Number :

MB2

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Resistor - Emitter Base (R2) :

47k Ω

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

Weight :

4.535924g

Number of Pins :

6

Published :

2011

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Max Power Dissipation :

300mW

Length :

6.35mm

Resistor - Base (R1) :

47k Ω

Width :

6.35mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transition Frequency :

180MHz

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

hFE Min :

80

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Height :

6.35mm

Pin Count :

6