PEMB10115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

300mW

Package / Case :

SOT-563, SOT-666

Min Operating Temperature :

-65°C

Factory Lead Time :

4 Weeks

Termination :

SMD/SMT

Terminal Form :

Flat

hFE Min :

100

Transistor Type :

2 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Power Dissipation :

300mW

Length :

6.35mm

Polarity :

PNP

REACH SVHC :

No SVHC

Width :

6.35mm

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 21

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Resistor - Base (R1) :

2.2k Ω

Element Configuration :

Dual

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Max Output Current :

100mA

Height :

6.35mm

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transition Frequency :

180MHz

Base Part Number :

MB10

Published :

2011

Mount :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Number of Pins :

6

JESD-609 Code :

e3

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)