PEMB15,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Radiation Hardening :

No

Mount :

Surface Mount

Number of Elements :

2

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

Polarity :

PNP

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Published :

2011

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Transistor Type :

2 PNP - Pre-Biased (Dual)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

4.7k Ω

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pin Count :

6

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30