PEMB11,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Collector Current :

100mA

Number of Pins :

6

Power Dissipation :

200mW

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

-10V

Polarity :

PNP

Terminal Form :

Flat

Resistor - Base (R1) :

10k Ω

Package / Case :

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Resistor - Emitter Base (R2) :

10k Ω

Frequency - Transition :

180MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Published :

2011

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

1μA

Number of Terminations :

6

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Base Part Number :

MB11

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Elements :

2

hFE Min :

30

Transistor Type :

2 PNP - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Mount :

Surface Mount