PEMB11,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Emitter Base Voltage (VEBO) :

-10V

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Number of Terminations :

6

Pin Count :

6

Frequency - Transition :

180MHz

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

300mW

hFE Min :

30

Element Configuration :

Dual

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

ECCN Code :

EAR99

Resistor - Base (R1) :

10k Ω

Number of Elements :

2

Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Published :

2011

Terminal Form :

Flat

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Min Operating Temperature :

-65°C

Base Part Number :

MB11

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Pins :

6