PEMB11,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation :

200mW

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Number of Elements :

2

Resistor - Base (R1) :

10k Ω

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Radiation Hardening :

No

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Resistor - Emitter Base (R2) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Pin Count :

6

Frequency - Transition :

180MHz

Polarity :

PNP

Base Part Number :

MB11

Published :

2011

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

-10V

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Transistor Type :

2 PNP - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

hFE Min :

30

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V