PEMB11,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Radiation Hardening :

No

Published :

2011

Number of Elements :

2

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Mount :

Surface Mount

Number of Pins :

6

Resistor - Emitter Base (R2) :

10k Ω

Polarity :

PNP

Terminal Form :

Flat

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Resistor - Base (R1) :

10k Ω

JESD-609 Code :

e3

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

-10V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

300mW

Base Part Number :

MB11

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Power Dissipation :

200mW

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

30

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

180MHz

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA

Min Operating Temperature :

-65°C

Package / Case :

SOT-563, SOT-666

Pin Count :

6