PEMB11,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Base Part Number :

MB11

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

2

Power Dissipation :

200mW

Pin Count :

6

Emitter Base Voltage (VEBO) :

-10V

Published :

2011

Mounting Type :

Surface Mount

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

1μA

Polarity :

PNP

Max Operating Temperature :

150°C

hFE Min :

30

Resistor - Base (R1) :

10k Ω

Resistor - Emitter Base (R2) :

10k Ω

Min Operating Temperature :

-65°C

Element Configuration :

Dual

Number of Pins :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Frequency - Transition :

180MHz

Max Breakdown Voltage :

50V