PEMB16,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Max Collector Current :

100mA

Max Power Dissipation :

300mW

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Max Operating Temperature :

150°C

Pin Count :

6

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MB16

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Form :

Flat

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Published :

2009

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Terminations :

6

Resistor - Base (R1) :

22k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

ECCN Code :

EAR99