PEMB1,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Element Configuration :

Dual

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

22k Ω

Base Part Number :

MB1

Published :

2011

Max Operating Temperature :

150°C

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

22k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Polarity :

PNP

Pin Count :

6

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING