PEMB11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

300mW

Power Dissipation :

200mW

Base Part Number :

MB11

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Resistor - Emitter Base (R2) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Pin Count :

6

Frequency - Transition :

180MHz

Emitter Base Voltage (VEBO) :

-10V

Current - Collector Cutoff (Max) :

1μA

Number of Terminations :

6

Max Collector Current :

100mA

Element Configuration :

Dual

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mount :

Surface Mount

Published :

2011

Number of Elements :

2

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

10k Ω

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity :

PNP

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

hFE Min :

30