PEMB11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

ECCN Code :

EAR99

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

30

Power Dissipation :

200mW

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Terminal Form :

Flat

Mounting Type :

Surface Mount

Base Part Number :

MB11

Published :

2011

Number of Pins :

6

Number of Terminations :

6

Polarity :

PNP

Frequency - Transition :

180MHz

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Pin Count :

6

Emitter Base Voltage (VEBO) :

-10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Breakdown Voltage :

50V

Number of Elements :

2

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Transistor Type :

2 PNP - Pre-Biased (Dual)

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

10k Ω

Min Operating Temperature :

-65°C