PEMB11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Frequency - Transition :

180MHz

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

1μA

JESD-609 Code :

e3

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Resistor - Base (R1) :

10k Ω

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Min Operating Temperature :

-65°C

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Pin Count :

6

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Operating Temperature :

150°C

Radiation Hardening :

No

Published :

2011

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

hFE Min :

30

Mount :

Surface Mount

Number of Elements :

2

Resistor - Emitter Base (R2) :

10k Ω

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Base Part Number :

MB11

Emitter Base Voltage (VEBO) :

-10V