PEMB1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Published :

2011

Number of Terminations :

6

Max Power Dissipation :

300mW

Pin Count :

6

Number of Elements :

2

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

22k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Polarity :

PNP

ECCN Code :

EAR99

Resistor - Base (R1) :

22k Ω

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Base Part Number :

MB1

Lead Free :

Lead Free

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA