PD57060STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Terminations :

2

Mount :

Surface Mount

Gain :

14.3dB

Max Power Dissipation :

79W

Power Dissipation :

79W

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

250

Transistor Application :

AMPLIFIER

Terminal Finish :

Matte Tin (Sn) - annealed

Max Operating Temperature :

165°C

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Polarity/Channel Type :

N-Channel

Transistor Type :

LDMOS

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

65V

Number of Elements :

1

Drain to Source Breakdown Voltage :

65V

Frequency :

945MHz

Element Configuration :

Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

7A

Current - Test :

100mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

28V

Number of Pins :

4

Package / Case :

PowerSO-10 Exposed Bottom Pad

Pin Count :

10

JESD-30 Code :

R-PDSO-F2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Max Output Power :

60W

Min Operating Temperature :

-65°C

Case Connection :

SOURCE

Base Part Number :

PD57060

Continuous Drain Current (ID) :

7A

Current Rating :

7A

Terminal Position :

Dual