PD57006S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Output Power :

6W

Drain to Source Breakdown Voltage :

65V

Radiation Hardening :

No

Power Gain :

15dB

Frequency :

945MHz

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Package / Case :

PowerSO-10 Exposed Bottom Pad

Case Connection :

SOURCE

Transistor Type :

LDMOS

Current - Test :

70mA

ECCN Code :

EAR99

Max Power Dissipation :

20W

Voltage - Test :

28V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Power Dissipation :

20W

Min Breakdown Voltage :

65V

Drain Current-Max (Abs) (ID) :

1A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-F2

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Flat

Transistor Application :

AMPLIFIER

Packaging :

Tube

Number of Pins :

4

Continuous Drain Current (ID) :

1A

Number of Terminations :

2

Terminal Position :

Dual

Base Part Number :

PD57006

Peak Reflow Temperature (Cel) :

250

Min Operating Temperature :

-65°C

Pin Count :

10

Number of Elements :

1

Current Rating :

1A

Drain to Source Voltage (Vdss) :

65V

Max Operating Temperature :

165°C

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30