PD57006S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

1A

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

1A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

4

JESD-30 Code :

R-PDSO-F2

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Current - Test :

70mA

Power Gain :

15dB

Lead Free :

Lead Free

Transistor Type :

LDMOS

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

165°C

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

20V

Max Output Power :

6W

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Min Breakdown Voltage :

65V

Terminal Finish :

MATTE TIN

Package / Case :

PowerSO-10 Exposed Bottom Pad

ECCN Code :

EAR99

Base Part Number :

PD57006

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

250

Drain to Source Voltage (Vdss) :

65V

Continuous Drain Current (ID) :

1A

Pin Count :

10

Drain to Source Breakdown Voltage :

65V

Terminal Position :

Dual

Case Connection :

SOURCE

Frequency :

945MHz

Power Dissipation :

20W

Max Power Dissipation :

20W