PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

Pin Count :

10

Polarity/Channel Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PDSO-G2

Number of Terminations :

2

Voltage - Test :

28V

Min Breakdown Voltage :

65V

Continuous Drain Current (ID) :

250mA

Drain to Source Voltage (Vdss) :

65V

Number of Pins :

3

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Max Output Power :

2W

Frequency :

960MHz

Packaging :

Tube

JESD-609 Code :

e3

Additional Feature :

High Reliability

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

250

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Gain :

15dB

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

65V

Voltage - Rated DC :

65V

Power Dissipation :

4.75W

Current Rating :

250mA

Transistor Type :

LDMOS

Case Connection :

SOURCE

Terminal Finish :

Matte Tin (Sn) - annealed

Max Operating Temperature :

165°C

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

PD57002

Current - Test :

10mA

Package / Case :

PowerSO-10 Exposed Bottom Pad

Element Configuration :

Single

Lead Free :

Lead Free

Max Power Dissipation :

4.75W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain Current-Max (Abs) (ID) :

0.25A

Terminal Position :

Dual

ECCN Code :

EAR99