PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

10mA

Power Gain :

15dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G2

Power Dissipation :

4.75W

Drain to Source Voltage (Vdss) :

65V

Peak Reflow Temperature (Cel) :

250

Max Output Power :

2W

Current Rating :

250mA

Continuous Drain Current (ID) :

250mA

Case Connection :

SOURCE

Radiation Hardening :

No

Voltage - Test :

28V

Min Breakdown Voltage :

65V

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - annealed

Min Operating Temperature :

-65°C

Voltage - Rated DC :

65V

ECCN Code :

EAR99

Number of Elements :

1

Packaging :

Tube

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

65V

Max Operating Temperature :

165°C

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain Current-Max (Abs) (ID) :

0.25A

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Transistor Type :

LDMOS

Element Configuration :

Single

Frequency :

960MHz

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Base Part Number :

PD57002

Number of Pins :

3

Pin Count :

10

Additional Feature :

High Reliability

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Power Dissipation :

4.75W