PD57006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Output Power :

6W

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1A

Width :

9.4mm

Radiation Hardening :

No

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

65V

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Length :

7.5mm

Height :

3.5mm

JESD-30 Code :

R-PDSO-G2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

PD57006

Frequency :

945MHz

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Pin Count :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Current - Test :

70mA

Max Operating Temperature :

165°C

Current Rating :

1A

Power Gain :

15dB

Peak Reflow Temperature (Cel) :

250

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Min Breakdown Voltage :

65V

Terminal Form :

Gull wing

Number of Pins :

3

Input Capacitance :

27pF

Case Connection :

SOURCE

Min Operating Temperature :

-65°C

Weight :

4.535924g

Power Dissipation :

20W

Drain Current-Max (Abs) (ID) :

1A

Max Power Dissipation :

20W

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

65V

Voltage - Test :

28V

Mount :

Surface Mount

Element Configuration :

Single

JESD-609 Code :

e3