PD57002
- Mfr.Part #
- PD57002
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 65V 960MHZ PWRSO-10
- Stock
- 131
- In Stock :
- 131
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Drain Current-Max (Abs) (ID) :
- 0.25A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 4.75W
- Case Connection :
- SOURCE
- Base Part Number :
- PD57002
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Min Operating Temperature :
- -65°C
- Polarity/Channel Type :
- N-Channel
- Current - Test :
- 10mA
- Frequency :
- 960MHz
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 65V
- Pin Count :
- 2
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Transistor Type :
- LDMOS
- JESD-30 Code :
- R-PDSO-G2
- Number of Pins :
- 10
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Test :
- 28V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 250mA
- Current Rating :
- 250mA
- Drain to Source Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Power - Output :
- 2W
- JESD-609 Code :
- e0
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Gain :
- 15dB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Power Dissipation :
- 4.75W
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- PD57002
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PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD57002 Description
PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.
PD57002 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD57002 Applications
ISM applications
DC large signal applications
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