PD57002
- Mfr.Part #
- PD57002
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 65V 960MHZ PWRSO-10
- Stock
- 131
- In Stock :
- 131
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 65V
- Current - Test :
- 10mA
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Max Power Dissipation :
- 4.75W
- Number of Pins :
- 10
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- SOURCE
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Packaging :
- Tube
- Pbfree Code :
- No
- Gain :
- 15dB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 250mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 960MHz
- Max Operating Temperature :
- 150°C
- Pin Count :
- 2
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Base Part Number :
- PD57002
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Drain to Source Voltage (Vdss) :
- 65V
- Continuous Drain Current (ID) :
- 250mA
- Min Operating Temperature :
- -65°C
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- LDMOS
- Power - Output :
- 2W
- JESD-30 Code :
- R-PDSO-G2
- Voltage - Test :
- 28V
- JESD-609 Code :
- e0
- Power Dissipation :
- 4.75W
- Datasheets
- PD57002
PD57002 Documents
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PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD57002 Description
PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.
PD57002 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD57002 Applications
ISM applications
DC large signal applications
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