PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated DC :

65V

Power Dissipation :

31.7W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Resistance :

760mOhm

Packaging :

Tube

Terminal Position :

Dual

Additional Feature :

High Reliability

Frequency :

945MHz

RoHS Status :

ROHS3 Compliant

Current Rating :

2.5A

ECCN Code :

EAR99

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

65V

Pin Count :

10

Package / Case :

PowerSO-10 Exposed Bottom Pad

Gate to Source Voltage (Vgs) :

20V

Gain :

16.5dB

Max Operating Temperature :

165°C

Transistor Application :

AMPLIFIER

Number of Pins :

3

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-F2

Factory Lead Time :

25 Weeks

Max Output Power :

18W

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

2.5A

Case Connection :

SOURCE

Max Power Dissipation :

31.7W

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Voltage - Test :

28V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

2

Lead Free :

Lead Free

Current - Test :

100mA

Base Part Number :

PD57018

Terminal Form :

Flat