PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Dual

Case Connection :

SOURCE

Radiation Hardening :

No

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-F2

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Output Power :

18W

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

Terminal Form :

Flat

ECCN Code :

EAR99

Mount :

Surface Mount

Frequency :

945MHz

Power Dissipation :

31.7W

Max Power Dissipation :

31.7W

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Terminal Finish :

MATTE TIN

Gain :

16.5dB

Packaging :

Tube

Voltage - Rated DC :

65V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Lead Free :

Lead Free

Current - Test :

100mA

Continuous Drain Current (ID) :

2.5A

Number of Terminations :

2

Current Rating :

2.5A

Base Part Number :

PD57018

RoHS Status :

ROHS3 Compliant

Voltage - Test :

28V

Min Operating Temperature :

-65°C

Drain to Source Breakdown Voltage :

65V

Factory Lead Time :

25 Weeks

Pin Count :

10

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Resistance :

760mOhm

Additional Feature :

High Reliability