PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

2.5A

Drain to Source Breakdown Voltage :

65V

Voltage - Rated DC :

65V

Number of Pins :

3

Voltage - Test :

28V

Current Rating :

2.5A

Radiation Hardening :

No

Packaging :

Tube

Drain to Source Resistance :

760mOhm

Terminal Form :

Flat

Polarity/Channel Type :

N-Channel

Package / Case :

PowerSO-10 Exposed Bottom Pad

Mount :

Surface Mount

Power Dissipation :

31.7W

Current - Test :

100mA

Max Output Power :

18W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

PD57018

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

250

Gain :

16.5dB

Terminal Finish :

MATTE TIN

Frequency :

945MHz

Terminal Position :

Dual

Transistor Type :

LDMOS

JESD-30 Code :

R-PDSO-F2

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Max Power Dissipation :

31.7W

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Factory Lead Time :

25 Weeks

Min Operating Temperature :

-65°C

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

165°C

Number of Terminations :

2

ECCN Code :

EAR99

Case Connection :

SOURCE