PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Lead Free :

Lead Free

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gain :

16.5dB

Max Power Dissipation :

31.7W

Max Operating Temperature :

165°C

Max Output Power :

18W

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

65V

Factory Lead Time :

25 Weeks

Package / Case :

PowerSO-10 Exposed Bottom Pad

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Terminal Position :

Dual

Current - Test :

100mA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Current Rating :

2.5A

JESD-609 Code :

e3

Voltage - Rated DC :

65V

Drain to Source Resistance :

760mOhm

Number of Pins :

3

JESD-30 Code :

R-PDSO-F2

Element Configuration :

Single

Terminal Form :

Flat

Frequency :

945MHz

RoHS Status :

ROHS3 Compliant

Power Dissipation :

31.7W

Transistor Type :

LDMOS

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

2.5A

Mount :

Surface Mount

Voltage - Test :

28V

Pin Count :

10

Base Part Number :

PD57018

Peak Reflow Temperature (Cel) :

250

Number of Terminations :

2

ECCN Code :

EAR99

Additional Feature :

High Reliability

Transistor Application :

AMPLIFIER

Terminal Finish :

MATTE TIN