PD57018TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Voltage (Vdss) :

65V

Pin Count :

10

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

100mA

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Terminations :

2

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Continuous Drain Current (ID) :

2.5A

Drain to Source Resistance :

760mOhm

Transistor Type :

LDMOS

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

25 Weeks

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Base Part Number :

PD57018

Drain to Source Breakdown Voltage :

65V

ECCN Code :

EAR99

Number of Pins :

3

Voltage - Test :

28V

Gain :

16.5dB

Frequency :

945MHz

Power Dissipation :

31.7W

Max Output Power :

18W

Max Power Dissipation :

31.7W

Additional Feature :

High Reliability

Case Connection :

SOURCE

Current Rating :

2.5A

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

250

Number of Elements :

1

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Reach Compliance Code :

not_compliant

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)