PD57018TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Current Rating :

2.5A

Drain to Source Breakdown Voltage :

65V

Max Power Dissipation :

31.7W

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Mount :

Surface Mount

Number of Pins :

3

Drain to Source Voltage (Vdss) :

65V

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

760mOhm

ECCN Code :

EAR99

Current - Test :

100mA

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Polarity/Channel Type :

N-Channel

Gain :

16.5dB

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

Number of Terminations :

2

Base Part Number :

PD57018

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Frequency :

945MHz

Terminal Position :

Dual

Pin Count :

10

Max Output Power :

18W

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

31.7W

Continuous Drain Current (ID) :

2.5A

JESD-30 Code :

R-PDSO-G2

Case Connection :

SOURCE

Terminal Finish :

MATTE TIN

Additional Feature :

High Reliability

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

250

Factory Lead Time :

25 Weeks