PD57018STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Max Output Power :

18W

Peak Reflow Temperature (Cel) :

250

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

Transistor Type :

LDMOS

Max Power Dissipation :

31.7W

Polarity/Channel Type :

N-Channel

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-30 Code :

R-PDSO-F2

Drain to Source Breakdown Voltage :

65V

Terminal Form :

Flat

Terminal Finish :

MATTE TIN

Additional Feature :

High Reliability

Number of Terminations :

2

Continuous Drain Current (ID) :

2.5A

Base Part Number :

PD57018

Current - Test :

100mA

Factory Lead Time :

25 Weeks

Max Operating Temperature :

165°C

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain to Source Voltage (Vdss) :

65V

Reach Compliance Code :

not_compliant

Current Rating :

2.5A

Pin Count :

10

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

760mOhm

Case Connection :

SOURCE

Voltage - Test :

28V

Qualification Status :

Not Qualified

Power Dissipation :

31.7W

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

JESD-609 Code :

e3

Mount :

Surface Mount

Gain :

16.5dB

Number of Pins :

3