PD57018STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Case Connection :

SOURCE

Element Configuration :

Single

Terminal Form :

Flat

Current Rating :

2.5A

Polarity/Channel Type :

N-Channel

Pin Count :

10

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

PowerSO-10 Exposed Bottom Pad

Additional Feature :

High Reliability

Power Dissipation :

31.7W

Max Power Dissipation :

31.7W

Number of Terminations :

2

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Max Output Power :

18W

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

760mOhm

JESD-30 Code :

R-PDSO-F2

Number of Elements :

1

Base Part Number :

PD57018

Drain to Source Voltage (Vdss) :

65V

Number of Pins :

3

Voltage - Test :

28V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

165°C

Terminal Finish :

MATTE TIN

Frequency :

945MHz

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-65°C

Current - Test :

100mA

Drain to Source Breakdown Voltage :

65V

Factory Lead Time :

25 Weeks

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Gain :

16.5dB

Continuous Drain Current (ID) :

2.5A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

250

Terminal Position :

Dual

Transistor Type :

LDMOS

Transistor Application :

AMPLIFIER