PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Pin Count :

10

Frequency :

945MHz

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-G2

Drain to Source Resistance :

760mOhm

Number of Elements :

1

Continuous Drain Current (ID) :

2.5A

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Length :

7.5mm

Max Power Dissipation :

31.7W

Case Connection :

SOURCE

Radiation Hardening :

No

Min Breakdown Voltage :

65V

ECCN Code :

EAR99

Additional Feature :

High Reliability

Voltage - Test :

28V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Current - Test :

100mA

Height :

3.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerSO-10 Exposed Bottom Pad

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

65V

Number of Terminations :

2

Terminal Form :

Gull wing

Factory Lead Time :

25 Weeks

Drain to Source Breakdown Voltage :

65V

Peak Reflow Temperature (Cel) :

250

Current Rating :

2.5A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Gain :

16.5dB

Mount :

Surface Mount

Voltage - Rated DC :

65V

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Max Output Power :

18W

Terminal Position :

Dual

Max Operating Temperature :

165°C

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Width :

9.4mm

Base Part Number :

PD57018

Power Dissipation :

31.7W

Transistor Type :

LDMOS