PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

250

Frequency :

945MHz

ECCN Code :

EAR99

Current - Test :

100mA

Height :

3.5mm

Current Rating :

2.5A

JESD-609 Code :

e3

Base Part Number :

PD57018

Min Breakdown Voltage :

65V

Number of Pins :

3

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

65V

Max Operating Temperature :

165°C

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Power Gain :

16.5dB

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Contact Plating :

Tin

Max Power Dissipation :

31.7W

Radiation Hardening :

No

Pin Count :

10

Length :

7.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

2.5A

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Voltage - Rated DC :

65V

Additional Feature :

High Reliability

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

760mOhm

Drain to Source Breakdown Voltage :

65V

Transistor Type :

LDMOS

Width :

9.4mm

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G2

Transistor Application :

AMPLIFIER

Min Operating Temperature :

-65°C

Package / Case :

PowerSO-10 Exposed Bottom Pad

Lead Free :

Lead Free

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

28V

Factory Lead Time :

25 Weeks

Power Dissipation :

31.7W

Max Output Power :

18W

Polarity/Channel Type :

N-Channel