PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Package / Case :

PowerSO-10 Exposed Bottom Pad

Drain to Source Voltage (Vdss) :

65V

Element Configuration :

Single

Max Power Dissipation :

31.7W

Min Operating Temperature :

-65°C

Continuous Drain Current (ID) :

2.5A

Width :

9.4mm

Max Operating Temperature :

165°C

Case Connection :

SOURCE

Number of Terminations :

2

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

Peak Reflow Temperature (Cel) :

250

Length :

7.5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

100mA

Transistor Application :

AMPLIFIER

Factory Lead Time :

25 Weeks

Voltage - Test :

28V

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Base Part Number :

PD57018

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

High Reliability

Pin Count :

10

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Radiation Hardening :

No

Power Gain :

16.5dB

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

65V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

760mOhm

Current Rating :

2.5A

Terminal Position :

Dual

Height :

3.5mm

Max Output Power :

18W

Power Dissipation :

31.7W

Packaging :

Tube

Contact Plating :

Tin

Min Breakdown Voltage :

65V

Drain to Source Breakdown Voltage :

65V

JESD-30 Code :

R-PDSO-G2

Number of Elements :

1

Transistor Type :

LDMOS