PD57030-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Height :

3.5mm

Voltage - Rated DC :

65V

Packaging :

Tube

Transistor Application :

AMPLIFIER

Min Breakdown Voltage :

65V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Min Operating Temperature :

-65°C

Width :

9.4mm

Drain Current-Max (Abs) (ID) :

4A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Form :

Gull wing

Factory Lead Time :

25 Weeks

Terminal Finish :

MATTE TIN

Element Configuration :

Single

JESD-609 Code :

e3

Length :

7.5mm

Max Power Dissipation :

52.8W

Base Part Number :

PD57030

Current Rating :

4A

Max Output Power :

30W

Number of Pins :

3

ECCN Code :

EAR99

Voltage - Test :

28V

Current - Test :

50mA

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

4A

Additional Feature :

High Reliability

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Frequency :

945MHz

Drain to Source Voltage (Vdss) :

65V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Mount :

Surface Mount

Number of Terminations :

2

Package / Case :

PowerSO-10 Exposed Bottom Pad

Pin Count :

2

JESD-30 Code :

R-PDSO-G2

Lead Free :

Lead Free

Power Gain :

14dB

Power Dissipation :

52.8W

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

250