PD57060S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Max Operating Temperature :

165°C

Terminal Form :

Flat

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Continuous Drain Current (ID) :

7A

Terminal Position :

Dual

Power Dissipation :

79W

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

65V

Number of Pins :

3

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

250

Radiation Hardening :

No

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

28V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Pin Count :

10

Additional Feature :

High Reliability

Max Power Dissipation :

79W

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

65V

Current Rating :

7A

Current - Test :

100mA

Element Configuration :

Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

65V

Drain Current-Max (Abs) (ID) :

7A

Max Output Power :

60W

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

Factory Lead Time :

25 Weeks

Package / Case :

PowerSO-10 Exposed Bottom Pad

Terminal Finish :

Matte Tin (Sn) - annealed

Gain :

14.3dB

JESD-609 Code :

e3

Base Part Number :

PD57060

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-30 Code :

R-PDSO-F2

Number of Elements :

1