PD57060S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Pin Count :

10

Element Configuration :

Single

Terminal Form :

Flat

Terminal Finish :

Matte Tin (Sn) - annealed

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Transistor Type :

LDMOS

Factory Lead Time :

25 Weeks

Additional Feature :

High Reliability

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

65V

Packaging :

Tube

Package / Case :

PowerSO-10 Exposed Bottom Pad

Current - Test :

100mA

Frequency :

945MHz

Drain to Source Breakdown Voltage :

65V

Power Dissipation :

79W

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

65V

Number of Elements :

1

Min Operating Temperature :

-65°C

Max Output Power :

60W

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

28V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Power Dissipation :

79W

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

PD57060

Peak Reflow Temperature (Cel) :

250

Max Operating Temperature :

165°C

Terminal Position :

Dual

Continuous Drain Current (ID) :

7A

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Current Rating :

7A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Gain :

14.3dB

JESD-30 Code :

R-PDSO-F2

Mount :

Surface Mount

Number of Pins :

3