PD57060-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Max Output Power :

60W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gain :

14.3dB

Terminal Form :

Gull wing

Min Breakdown Voltage :

65V

Terminal Finish :

Matte Tin (Sn) - annealed

ECCN Code :

EAR99

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G2

Base Part Number :

PD57060

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

165°C

Element Configuration :

Single

Drain to Source Breakdown Voltage :

65V

Lead Free :

Lead Free

Voltage - Rated DC :

65V

Frequency :

945MHz

Current Rating :

7A

Drain Current-Max (Abs) (ID) :

7A

Transistor Type :

LDMOS

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Pin Count :

10

Continuous Drain Current (ID) :

7A

Packaging :

Tube

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

Factory Lead Time :

25 Weeks

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

High Reliability

Package / Case :

PowerSO-10 Exposed Bottom Pad

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

250

Number of Terminations :

2

Voltage - Test :

28V

Drain to Source Voltage (Vdss) :

65V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

JESD-609 Code :

e3

Current - Test :

100mA

Number of Pins :

3

Max Power Dissipation :

79W

Power Dissipation :

79W