PD57060-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Power Dissipation :

79W

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Peak Reflow Temperature (Cel) :

250

Voltage - Rated DC :

65V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Min Breakdown Voltage :

65V

Gate to Source Voltage (Vgs) :

20V

Max Output Power :

60W

Gain :

14.3dB

Factory Lead Time :

25 Weeks

Terminal Position :

Dual

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-609 Code :

e3

Current Rating :

7A

Case Connection :

SOURCE

Base Part Number :

PD57060

Qualification Status :

Not Qualified

Voltage - Test :

28V

Current - Test :

100mA

Frequency :

945MHz

Element Configuration :

Single

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

165°C

JESD-30 Code :

R-PDSO-G2

Number of Pins :

3

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-65°C

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

65V

Drain to Source Voltage (Vdss) :

65V

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

7A

Packaging :

Tube

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

79W

Pin Count :

10

Lead Free :

Lead Free