PD57060-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

28V

Terminal Form :

Gull wing

Power Dissipation :

79W

Drain to Source Breakdown Voltage :

65V

Transistor Type :

LDMOS

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

7A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Output Power :

60W

Min Breakdown Voltage :

65V

Drain to Source Voltage (Vdss) :

65V

Frequency :

945MHz

Current - Test :

100mA

Current Rating :

7A

Terminal Finish :

Matte Tin (Sn) - annealed

Max Power Dissipation :

79W

Min Operating Temperature :

-65°C

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-G2

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

PD57060

Number of Terminations :

2

Terminal Position :

Dual

Max Operating Temperature :

165°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

25 Weeks

Element Configuration :

Single

Packaging :

Tube

Number of Elements :

1

Pin Count :

10

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

250

Gain :

14.3dB

Voltage - Rated DC :

65V