PD57060-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Case Connection :

SOURCE

Continuous Drain Current (ID) :

7A

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

65V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

7A

Peak Reflow Temperature (Cel) :

250

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Test :

100mA

JESD-30 Code :

R-PDSO-G2

Max Output Power :

60W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

High Reliability

Factory Lead Time :

25 Weeks

Min Breakdown Voltage :

65V

Qualification Status :

Not Qualified

Max Power Dissipation :

79W

Max Operating Temperature :

165°C

Terminal Form :

Gull wing

Element Configuration :

Single

Mount :

Surface Mount

Base Part Number :

PD57060

Packaging :

Tube

Drain to Source Voltage (Vdss) :

65V

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

10

Lead Free :

Lead Free

Power Dissipation :

79W

Voltage - Test :

28V

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

ECCN Code :

EAR99

Package / Case :

PowerSO-10 Exposed Bottom Pad

Drain to Source Breakdown Voltage :

65V

Gain :

14.3dB

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Terminal Position :

Dual

Number of Terminations :

2

Current Rating :

7A

Min Operating Temperature :

-65°C