PD57060-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Output Power :

60W

Gain :

14.3dB

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

65V

Transistor Type :

LDMOS

Number of Terminations :

2

Continuous Drain Current (ID) :

7A

Min Breakdown Voltage :

65V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Operating Temperature :

165°C

Voltage - Test :

28V

Max Power Dissipation :

79W

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

High Reliability

Current Rating :

7A

Number of Pins :

3

Min Operating Temperature :

-65°C

Element Configuration :

Single

Current - Test :

100mA

Frequency :

945MHz

Voltage - Rated DC :

65V

Power Dissipation :

79W

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Mount :

Surface Mount

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G2

Drain Current-Max (Abs) (ID) :

7A

Polarity/Channel Type :

N-Channel

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

65V

Peak Reflow Temperature (Cel) :

250

Pin Count :

10

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Base Part Number :

PD57060

Factory Lead Time :

25 Weeks