PD55035S-E

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Mfr.Part #
PD55035S-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10 Exposed Bottom Pad
Datasheet
Download
Description
FET RF 40V 500MHZ PWRSO10
Stock
24
In Stock :
24

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Drain Current-Max (Abs) (ID) :
7A
Power Dissipation :
95W
Current - Test :
200mA
Max Operating Temperature :
165°C
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Case Connection :
SOURCE
Mount :
Surface Mount
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Transistor Application :
AMPLIFIER
Voltage - Rated DC :
40V
Number of Terminations :
2
JESD-30 Code :
R-PDSO-F2
Max Power Dissipation :
95W
Peak Reflow Temperature (Cel) :
225
Lead Free :
Lead Free
Pbfree Code :
yes
Terminal Position :
Dual
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
ECCN Code :
EAR99
Additional Feature :
High Reliability
Pin Count :
10
Package / Case :
PowerSO-10 Exposed Bottom Pad
Packaging :
Tube
Terminal Form :
Flat
Drain to Source Voltage (Vdss) :
40V
Factory Lead Time :
52 Weeks
JESD-609 Code :
e3
Contact Plating :
Tin
Base Part Number :
PD55035
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
40V
Polarity/Channel Type :
N-Channel
Radiation Hardening :
No
Power Gain :
16.9dB
Max Output Power :
35W
Voltage - Test :
12.5V
Number of Elements :
1
Frequency :
500MHz
Min Operating Temperature :
-65°C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
LDMOS
Continuous Drain Current (ID) :
7A
Current Rating :
7A
Datasheets
PD55035S-E
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035S-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Package / Case:PowerSO-10 Exposed Bottom Pad, Base Part Number:PD55035, PD55035S-E pinout, PD55035S-E datasheet PDF, PD55035S-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035S-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD55035S-E


PD55035S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

PD55035S-E Description


The component is an enhancement-mode lateral field-effect RF power transistor with a shared source N-channel. It is intended for industrial, commercial, and high gain applications. It runs in common source mode at 12 V at frequencies up to 1 GHz. The device is housed in PowerSO10RF, the first true SMD plastic RF power package, and has the high gain, linearity, and reliability of ST's most recent LDMOS technology.



PD55035S-E Features


  • outstanding thermal stability

  • Config of common sources

  • POUT = 35 W with a gain of 16.9 dB at 500 MHz and 12.5 V.

  • Novel plastic package for RF



PD55035S-E Applications


Switching applications


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