PD55035S-E
- Mfr.Part #
- PD55035S-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 40V 500MHZ PWRSO10
- Stock
- 24
- In Stock :
- 24
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Drain Current-Max (Abs) (ID) :
- 7A
- Power Dissipation :
- 95W
- Current - Test :
- 200mA
- Max Operating Temperature :
- 165°C
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Case Connection :
- SOURCE
- Mount :
- Surface Mount
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 40V
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PDSO-F2
- Max Power Dissipation :
- 95W
- Peak Reflow Temperature (Cel) :
- 225
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Pin Count :
- 10
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Packaging :
- Tube
- Terminal Form :
- Flat
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 52 Weeks
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Base Part Number :
- PD55035
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Power Gain :
- 16.9dB
- Max Output Power :
- 35W
- Voltage - Test :
- 12.5V
- Number of Elements :
- 1
- Frequency :
- 500MHz
- Min Operating Temperature :
- -65°C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- LDMOS
- Continuous Drain Current (ID) :
- 7A
- Current Rating :
- 7A
- Datasheets
- PD55035S-E
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PD55035S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD55035S-E Description
The component is an enhancement-mode lateral field-effect RF power transistor with a shared source N-channel. It is intended for industrial, commercial, and high gain applications. It runs in common source mode at 12 V at frequencies up to 1 GHz. The device is housed in PowerSO10RF, the first true SMD plastic RF power package, and has the high gain, linearity, and reliability of ST's most recent LDMOS technology.
PD55035S-E Features
-
outstanding thermal stability
-
Config of common sources
-
POUT = 35 W with a gain of 16.9 dB at 500 MHz and 12.5 V.
-
Novel plastic package for RF
PD55035S-E Applications
Switching applications
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