PD55035S-E
- Mfr.Part #
- PD55035S-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 40V 500MHZ PWRSO10
- Stock
- 24
- In Stock :
- 24
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 95W
- Factory Lead Time :
- 52 Weeks
- Drain to Source Voltage (Vdss) :
- 40V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Terminal Form :
- Flat
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- High Reliability
- ECCN Code :
- EAR99
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- RoHS Status :
- ROHS3 Compliant
- Voltage - Test :
- 12.5V
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Tin
- Current Rating :
- 7A
- Peak Reflow Temperature (Cel) :
- 225
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Output Power :
- 35W
- JESD-30 Code :
- R-PDSO-F2
- JESD-609 Code :
- e3
- Max Operating Temperature :
- 165°C
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Current - Test :
- 200mA
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 40V
- Transistor Type :
- LDMOS
- Lead Free :
- Lead Free
- Frequency :
- 500MHz
- Continuous Drain Current (ID) :
- 7A
- Drain Current-Max (Abs) (ID) :
- 7A
- Pin Count :
- 10
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Min Operating Temperature :
- -65°C
- Power Gain :
- 16.9dB
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Base Part Number :
- PD55035
- Drain to Source Breakdown Voltage :
- 40V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Power Dissipation :
- 95W
- Case Connection :
- SOURCE
- Datasheets
- PD55035S-E
.jpg)
PD55035S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD55035S-E Description
The component is an enhancement-mode lateral field-effect RF power transistor with a shared source N-channel. It is intended for industrial, commercial, and high gain applications. It runs in common source mode at 12 V at frequencies up to 1 GHz. The device is housed in PowerSO10RF, the first true SMD plastic RF power package, and has the high gain, linearity, and reliability of ST's most recent LDMOS technology.
PD55035S-E Features
-
outstanding thermal stability
-
Config of common sources
-
POUT = 35 W with a gain of 16.9 dB at 500 MHz and 12.5 V.
-
Novel plastic package for RF
PD55035S-E Applications
Switching applications
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















