PD55003STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Transistor Type :

LDMOS

Max Output Power :

3W

Gate to Source Voltage (Vgs) :

20V

Voltage - Test :

12.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Flat

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F2

Frequency :

500MHz

Power Dissipation :

31.7W

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gain :

17dB

Element Configuration :

Single

Additional Feature :

High Reliability

Qualification Status :

Not Qualified

Current Rating :

2.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Min Operating Temperature :

-65°C

Max Power Dissipation :

31.7W

Current - Test :

50mA

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

10

Max Operating Temperature :

165°C

Drain to Source Voltage (Vdss) :

40V

Base Part Number :

PD55003

Continuous Drain Current (ID) :

2.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99