PD55015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Factory Lead Time :

25 Weeks

Drain to Source Voltage (Vdss) :

40V

Voltage - Test :

12.5V

Additional Feature :

High Reliability

Power Gain :

14dB

REACH SVHC :

No SVHC

Length :

7.5mm

Packaging :

Tube

Continuous Drain Current (ID) :

5A

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Terminal Form :

Gull wing

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

2

Mount :

Surface Mount

Frequency :

500MHz

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

PD55015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

165°C

Max Output Power :

15W

Number of Pins :

2

Element Configuration :

Single

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Transistor Type :

LDMOS

RoHS Status :

ROHS3 Compliant

Pin Count :

10

Power Dissipation :

73W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Height :

3.5mm

Terminal Position :

Dual

Input Capacitance :

89pF

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Lead Free :

Lead Free

Max Power Dissipation :

73W

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

40V

Min Breakdown Voltage :

40V

Current Rating :

5A

Width :

9.4mm

Drain Current-Max (Abs) (ID) :

5A

Current - Test :

150mA