PD55015-E

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Mfr.Part #
PD55015-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Datasheet
Download
Description
FET RF 40V 500MHZ PWRSO-10
Stock
970
In Stock :
970

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Mount :
Surface Mount
Length :
7.5mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Polarity/Channel Type :
N-Channel
Number of Pins :
2
Peak Reflow Temperature (Cel) :
250
Time@Peak Reflow Temperature-Max (s) :
30
Max Output Power :
15W
JESD-609 Code :
e3
Case Connection :
SOURCE
Input Capacitance :
89pF
Continuous Drain Current (ID) :
5A
RoHS Status :
ROHS3 Compliant
Transistor Type :
LDMOS
Current - Test :
150mA
Drain to Source Voltage (Vdss) :
40V
Power Dissipation :
73W
Lead Free :
Lead Free
Factory Lead Time :
25 Weeks
Drain Current-Max (Abs) (ID) :
5A
Voltage - Test :
12.5V
Drain to Source Breakdown Voltage :
40V
Base Part Number :
PD55015
Max Operating Temperature :
165°C
Terminal Form :
Gull wing
Max Power Dissipation :
73W
Power Gain :
14dB
Terminal Position :
Dual
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
9.4mm
Number of Elements :
1
REACH SVHC :
No SVHC
Pin Count :
10
Height :
3.5mm
Min Operating Temperature :
-65°C
Min Breakdown Voltage :
40V
Number of Terminations :
2
Radiation Hardening :
No
Current Rating :
5A
Transistor Application :
AMPLIFIER
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Frequency :
500MHz
Additional Feature :
High Reliability
Element Configuration :
Single
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn) - annealed
Package / Case :
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD55015-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:2, Base Part Number:PD55015, Number of Terminations:2, Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads), PD55015-E pinout, PD55015-E datasheet PDF, PD55015-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD55015-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD55015-E


PD55015-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

Description:

The STMicroelectronics PD55015-E RF FET Transistor is a high-performance, low-cost, high-power FET transistor designed for use in RF applications. It features a 40 V drain-source voltage, 5 A drain current, 73 W power dissipation, and a frequency range of 480 MHz to 520 MHz. The device is housed in a PowerSO-10RF package, making it suitable for use in a wide range of applications.

Features:

• High-performance, low-cost, high-power FET transistor
• 40 V drain-source voltage
• 5 A drain current
• 73 W power dissipation
• Frequency range of 480 MHz to 520 MHz
• Housed in a PowerSO-10RF package

Applications:

The STMicroelectronics PD55015-E RF FET Transistor is suitable for use in a wide range of RF applications, including:

• Wireless communication systems
• Cellular base stations
• Radio transmitters and receivers
• Automotive electronics
• Industrial control systems
• Medical electronics
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