PD55015-E
- Mfr.Part #
- PD55015-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet
- Download
- Description
- FET RF 40V 500MHZ PWRSO-10
- Stock
- 970
- In Stock :
- 970
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Width :
- 9.4mm
- Continuous Drain Current (ID) :
- 5A
- Min Breakdown Voltage :
- 40V
- Max Operating Temperature :
- 165°C
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Max Output Power :
- 15W
- Package / Case :
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 5A
- Terminal Position :
- Dual
- Length :
- 7.5mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 3.5mm
- REACH SVHC :
- No SVHC
- Case Connection :
- SOURCE
- Current Rating :
- 5A
- Peak Reflow Temperature (Cel) :
- 250
- Current - Test :
- 150mA
- Frequency :
- 500MHz
- Base Part Number :
- PD55015
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Gain :
- 14dB
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 73W
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Voltage - Test :
- 12.5V
- Transistor Type :
- LDMOS
- Min Operating Temperature :
- -65°C
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 40V
- Drain to Source Breakdown Voltage :
- 40V
- Factory Lead Time :
- 25 Weeks
- Max Power Dissipation :
- 73W
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Input Capacitance :
- 89pF
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 2
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 10
- Datasheets
- PD55015-E

PD55015-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
The STMicroelectronics PD55015-E RF FET Transistor is a high-performance, low-cost, high-power FET transistor designed for use in RF applications. It features a 40 V drain-source voltage, 5 A drain current, 73 W power dissipation, and a frequency range of 480 MHz to 520 MHz. The device is housed in a PowerSO-10RF package, making it suitable for use in a wide range of applications.
Features:
• High-performance, low-cost, high-power FET transistor
• 40 V drain-source voltage
• 5 A drain current
• 73 W power dissipation
• Frequency range of 480 MHz to 520 MHz
• Housed in a PowerSO-10RF package
Applications:
The STMicroelectronics PD55015-E RF FET Transistor is suitable for use in a wide range of RF applications, including:
• Wireless communication systems
• Cellular base stations
• Radio transmitters and receivers
• Automotive electronics
• Industrial control systems
• Medical electronics
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