PD55008TR

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

4A

Radiation Hardening :

No

Current - Test :

150mA

Drain Current-Max (Abs) (ID) :

4A

JESD-609 Code :

e3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Base Part Number :

PD55008

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-G2

Number of Terminations :

2

Case Connection :

SOURCE

Max Power Dissipation :

52.8W

Current Rating :

4A

Gain :

17dB

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - annealed

Voltage - Test :

12.5V

Max Operating Temperature :

165°C

Frequency :

500MHz

Transistor Application :

AMPLIFIER

Min Operating Temperature :

-65°C

Terminal Position :

Dual

Power Dissipation :

52.8W

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Pin Count :

10

Drain to Source Breakdown Voltage :

40V

Max Output Power :

8W

Factory Lead Time :

25 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR