PD55008-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Mount :

Surface Mount

Radiation Hardening :

No

Terminal Position :

Dual

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Voltage - Rated DC :

40V

JESD-609 Code :

e3

Max Power Dissipation :

52.8W

Peak Reflow Temperature (Cel) :

250

Factory Lead Time :

25 Weeks

Case Connection :

SOURCE

Continuous Drain Current (ID) :

4A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current Rating :

4A

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Input Capacitance :

58pF

Voltage - Test :

12.5V

Additional Feature :

High Reliability

Number of Terminations :

2

Base Part Number :

PD55008

Height :

3.5mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

165°C

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G2

Power Gain :

17dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Package / Case :

PowerSO-10 Exposed Bottom Pad

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Min Breakdown Voltage :

40V

Max Output Power :

8W

Pin Count :

10

Drain to Source Voltage (Vdss) :

40V

Frequency :

500MHz

Terminal Finish :

Matte Tin (Sn) - annealed

Min Operating Temperature :

-65°C

Power Dissipation :

52.8W

Drain Current-Max (Abs) (ID) :

4A

Current - Test :

150mA

Transistor Type :

LDMOS

Length :

7.5mm

Width :

9.4mm

Number of Pins :

3

Number of Elements :

1

Lead Free :

Lead Free