PD55008-E
- Mfr.Part #
- PD55008-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 40V 500MHZ PWRSO10
- Stock
- 624
- In Stock :
- 624
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Voltage - Rated DC :
- 40V
- Min Operating Temperature :
- -65°C
- Peak Reflow Temperature (Cel) :
- 250
- Frequency :
- 500MHz
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 10
- Max Power Dissipation :
- 52.8W
- Drain to Source Breakdown Voltage :
- 40V
- Power Gain :
- 17dB
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Width :
- 9.4mm
- Min Breakdown Voltage :
- 40V
- Current Rating :
- 4A
- Height :
- 3.5mm
- ECCN Code :
- EAR99
- Length :
- 7.5mm
- Mount :
- Surface Mount
- Base Part Number :
- PD55008
- Transistor Application :
- AMPLIFIER
- Input Capacitance :
- 58pF
- Terminal Position :
- Dual
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Transistor Type :
- LDMOS
- Power Dissipation :
- 52.8W
- Number of Terminations :
- 2
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Test :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-30 Code :
- R-PDSO-G2
- Drain Current-Max (Abs) (ID) :
- 4A
- Max Output Power :
- 8W
- Case Connection :
- SOURCE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 4A
- Voltage - Test :
- 12.5V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Operating Temperature :
- 165°C
- Factory Lead Time :
- 25 Weeks
- Datasheets
- PD55008-E
PD55008-E Documents
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PD55008-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
Features:
- 40V drain-source voltage rating
- 500MHz power gain
- PowerSO10 package
Applications: The STMicroelectronics PD55008-E FET RF device is suitable for use in a variety of RF applications, such as amplifiers, mixers, oscillators, and switches. It can also be used in high-frequency power amplifiers, low-noise amplifiers, and other RF circuits.
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