PD55008-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Gain :

17dB

Radiation Hardening :

No

Package / Case :

PowerSO-10 Exposed Bottom Pad

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

250

Current Rating :

4A

Continuous Drain Current (ID) :

4A

Power Dissipation :

52.8W

Number of Terminations :

2

Pin Count :

10

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

165°C

JESD-30 Code :

R-PDSO-G2

Max Output Power :

8W

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

4A

Transistor Application :

AMPLIFIER

Min Breakdown Voltage :

40V

Number of Elements :

1

Input Capacitance :

58pF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Case Connection :

SOURCE

Length :

7.5mm

Voltage - Test :

12.5V

Height :

3.5mm

Frequency :

500MHz

Drain to Source Breakdown Voltage :

40V

Base Part Number :

PD55008

Lead Free :

Lead Free

Max Power Dissipation :

52.8W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Polarity/Channel Type :

N-Channel

Current - Test :

150mA

Width :

9.4mm

Number of Pins :

3

Terminal Position :

Dual

Additional Feature :

High Reliability

Mount :

Surface Mount

Factory Lead Time :

25 Weeks

Transistor Type :

LDMOS

Voltage - Rated DC :

40V