PD55003TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

31.7W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Transistor Application :

AMPLIFIER

Current - Test :

50mA

Element Configuration :

Single

Frequency :

500MHz

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Polarity/Channel Type :

N-Channel

Factory Lead Time :

25 Weeks

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

PD55003

Power Dissipation :

31.7W

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-30 Code :

R-PDSO-G2

Transistor Type :

LDMOS

Max Output Power :

3W

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

2.5A

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

High Reliability

JESD-609 Code :

e3

Gain :

17dB

Current Rating :

2.5A

Voltage - Test :

12.5V

Peak Reflow Temperature (Cel) :

250

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Pins :

4