PD55008TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

150mA

Drain to Source Voltage (Vdss) :

40V

Transistor Type :

LDMOS

Frequency :

500MHz

Polarity/Channel Type :

N-Channel

Current Rating :

4A

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Max Power Dissipation :

52.8W

Element Configuration :

Single

Max Operating Temperature :

165°C

Base Part Number :

PD55008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gain :

17dB

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4A

Number of Elements :

1

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

40V

Drain Current-Max (Abs) (ID) :

4A

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

2

Factory Lead Time :

25 Weeks

Pin Count :

10

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G2

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Terminal Form :

Gull wing

Power Dissipation :

52.8W

Number of Pins :

3

Min Operating Temperature :

-65°C

Max Output Power :

8W

Voltage - Test :

12.5V