PD55008TR-E
- Mfr.Part #
- PD55008TR-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet
- Download
- Description
- TRANSISTOR RF POWERSO-10
- Stock
- 264
- In Stock :
- 264
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Current Rating :
- 4A
- Frequency :
- 500MHz
- Mount :
- Surface Mount
- Current - Test :
- 150mA
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel) :
- 250
- Gain :
- 17dB
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-30 Code :
- R-PDSO-G2
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Package / Case :
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- PD55008
- Factory Lead Time :
- 25 Weeks
- Pin Count :
- 10
- Drain Current-Max (Abs) (ID) :
- 4A
- Max Operating Temperature :
- 165°C
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 52.8W
- Continuous Drain Current (ID) :
- 4A
- Radiation Hardening :
- No
- Min Operating Temperature :
- -65°C
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 52.8W
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 40V
- Voltage - Test :
- 12.5V
- ECCN Code :
- EAR99
- Case Connection :
- SOURCE
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Output Power :
- 8W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 40V
- Number of Terminations :
- 2
- Transistor Type :
- LDMOS
- Datasheets
- PD55008TR-E
PD55008TR-E Documents

PD55008TR-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
Features:
- N-Channel RF PowerSO-10 Transistor
- Maximum drain-source voltage of 30V
- Maximum drain current of 8A
- Low gate-source capacitance
- Low gate-drain capacitance
- Low on-resistance
- High power dissipation
- High frequency operation
Applications:
- RF power amplifiers
- High frequency switching applications
- High power switching applications
- High frequency power supplies
- High power DC-DC converters
- High power RF switching applications
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