PD55008TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Element Configuration :

Single

Case Connection :

SOURCE

Current - Test :

150mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

12.5V

Terminal Finish :

Matte Tin (Sn) - annealed

Factory Lead Time :

25 Weeks

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

250

Transistor Application :

AMPLIFIER

Gain :

17dB

Additional Feature :

High Reliability

Terminal Position :

Dual

Max Output Power :

8W

Number of Terminations :

2

Power Dissipation :

52.8W

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Frequency :

500MHz

Current Rating :

4A

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PDSO-G2

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Base Part Number :

PD55008

Min Operating Temperature :

-65°C

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3

Max Power Dissipation :

52.8W

Pin Count :

10

Drain Current-Max (Abs) (ID) :

4A

Transistor Type :

LDMOS

Terminal Form :

Gull wing

Max Operating Temperature :

165°C

Continuous Drain Current (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No