PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

3

Radiation Hardening :

No

Gain :

17dB

ECCN Code :

EAR99

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

40V

Max Output Power :

8W

Base Part Number :

PD55008

Factory Lead Time :

25 Weeks

Packaging :

Tube

Voltage - Test :

12.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

165°C

JESD-30 Code :

R-PDSO-F2

Power Dissipation :

52.8W

Terminal Form :

Flat

Frequency :

500MHz

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Current - Test :

150mA

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

High Reliability

Transistor Type :

LDMOS

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

250

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Lead Free :

Lead Free

Max Power Dissipation :

52.8W

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

10

JESD-609 Code :

e3

Current Rating :

4A

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant