PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Factory Lead Time :

25 Weeks

Terminal Position :

Dual

Frequency :

500MHz

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Base Part Number :

PD55008

Gain :

17dB

Peak Reflow Temperature (Cel) :

250

Drain to Source Voltage (Vdss) :

40V

Transistor Type :

LDMOS

Max Output Power :

8W

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Voltage - Test :

12.5V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Mount :

Surface Mount

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Power Dissipation :

52.8W

Continuous Drain Current (ID) :

4A

Voltage - Rated DC :

40V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-F2

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

52.8W

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Current Rating :

4A

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

2

Drain to Source Breakdown Voltage :

40V

Terminal Finish :

Matte Tin (Sn) - annealed

Element Configuration :

Single

Current - Test :

150mA

Lead Free :

Lead Free

Number of Pins :

3

Additional Feature :

High Reliability

Pin Count :

10

Packaging :

Tube

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)