PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Additional Feature :

High Reliability

Lead Free :

Lead Free

Gain :

17dB

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

52.8W

Terminal Finish :

Matte Tin (Sn) - annealed

Max Operating Temperature :

165°C

Factory Lead Time :

25 Weeks

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

4A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

JESD-30 Code :

R-PDSO-F2

Pin Count :

10

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Base Part Number :

PD55008

Radiation Hardening :

No

Packaging :

Tube

Voltage - Test :

12.5V

Current - Test :

150mA

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Element Configuration :

Single

Package / Case :

PowerSO-10 Exposed Bottom Pad

Number of Elements :

1

Transistor Type :

LDMOS

Power Dissipation :

52.8W

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Current Rating :

4A

Peak Reflow Temperature (Cel) :

250

Voltage - Rated DC :

40V

Frequency :

500MHz

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Max Output Power :

8W

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

4A