PD55008

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

PD55008

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

2

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

25 Weeks

Min Breakdown Voltage :

40V

Terminal Form :

Gull wing

Power Gain :

17dB

Transistor Type :

LDMOS

Height :

3.5mm

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Current - Test :

150mA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Current Rating :

4A

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

4A

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Max Operating Temperature :

165°C

Terminal Position :

Dual

Length :

7.5mm

Min Operating Temperature :

-65°C

Drain Current-Max (Abs) (ID) :

4A

Power Dissipation :

52.8W

Width :

9.4mm

Drain to Source Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-G2

Lead Free :

Lead Free

Voltage - Test :

12.5V

Pin Count :

10

Frequency :

500MHz

Case Connection :

SOURCE

Input Capacitance :

58pF

Voltage - Rated DC :

40V

Number of Elements :

1

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Output Power :

8W

Max Power Dissipation :

52.8W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3