PD55035-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Finish :

Matte Tin (Sn)

Current Rating :

7A

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-G2

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Power Gain :

16.9dB

Max Output Power :

35W

ECCN Code :

EAR99

Voltage - Test :

12.5V

Power Dissipation :

95W

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Element Configuration :

Single

Mount :

Surface Mount

Pin Count :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Terminal Position :

Dual

Max Operating Temperature :

165°C

Case Connection :

SOURCE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

95W

Current - Test :

200mA

Base Part Number :

PD55035

Number of Terminations :

2

Frequency :

500MHz

Continuous Drain Current (ID) :

7A

Terminal Form :

Gull wing

Number of Elements :

1

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3