NTE2369

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminals :

3

Pin Count :

3

Manufacturer :

NTE Electronics

Package :

Bag

Number of Elements :

1

Current - Collector (Ic) (Max) :

100 mA

Length :

152.4 mm

Resistor - Base (R1) :

4.7 kOhms

DC Current Gain-Min (hFE) :

80

Width :

101.6 mm

Surface Mount :

No

Polarity/Channel Type :

NPN

Collector Current-Max (IC) :

0.1 A

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Frequency - Transition :

250 MHz

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

NPN - Pre-Biased

Qualification Status :

Not Qualified

Weight :

4.535924 g

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.3 W

Subcategory :

Other Transistors

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

50 V

Power - Max :

300 mW

Height :

6.35 mm

Package Shape :

Round

Product Status :

Active

HTS Code :

8541.21.00.75

Reach Compliance Code :

Unknown

JESD-30 Code :

O-PBCY-T3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

RoHS :

Compliant

Package / Case :

TO-226-3, TO-92-3 Short Body

Collector-Emitter Voltage-Max :

50 V

Resistor - Emitter Base (R2) :

4.7 kOhms

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Additional Feature :

DIGITAL, BUILT IN BIAS RESISTOR

Series :

-

Transistor Application :

SWITCHING

Supplier Device Package :

TO-92S