NGB8206NG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Test Condition :

300V, 9A, 1k Ω, 5V

Transistor Application :

AUTOMOTIVE IGNITION

Case Connection :

COLLECTOR

Number of Pins :

3

Published :

2009

Max Power Dissipation :

150W

Power Dissipation :

150W

Number of Elements :

1

Base Part Number :

NGB8206

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Logic

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

1.9V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

15V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Td (on/off) @ 25°C :

-/5μs

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

ECCN Code :

EAR99

Current Rating :

20A

Rise Time-Max :

8000ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

2.1V

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Turn Off Time-Nom (toff) :

18500 ns

Max Collector Current :

20A

Turn On Time :

6500 ns

Voltage - Rated DC :

350V

Number of Terminations :

2

Packaging :

Tube

Current - Collector Pulsed (Icm) :

50A

Pin Count :

3

Pbfree Code :

yes

Fall Time-Max (tf) :

14000ns

Collector Emitter Breakdown Voltage :

390V