NGB8202NT4

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Mfr.Part #
NGB8202NT4
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 440V 20A 150W D2PAK
Stock
29,488
In Stock :
29,488

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Base Part Number :
NGB8202
Gate-Emitter Voltage-Max :
15V
Max Power Dissipation :
150W
Turn On Time :
6500 ns
Pin Count :
3
Transistor Application :
AUTOMOTIVE IGNITION
JESD-609 Code :
e0
Collector Emitter Voltage (VCEO) :
1.9V
Gate-Emitter Thr Voltage-Max :
2.1V
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Terminal Form :
Gull wing
Input Type :
Logic
Fall Time-Max (tf) :
14000ns
Terminal Position :
Single
Number of Pins :
3
Rise Time-Max :
8000ns
Qualification Status :
Not Qualified
Mount :
Surface Mount
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
30
RoHS Status :
Non-RoHS Compliant
Peak Reflow Temperature (Cel) :
240
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pbfree Code :
No
Turn Off Time-Nom (toff) :
18500 ns
Collector Emitter Breakdown Voltage :
440V
Number of Elements :
1
Current Rating :
20A
Power Dissipation :
150W
Current - Collector Pulsed (Icm) :
50A
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Max Collector Current :
20A
Terminal Finish :
Tin/Lead (Sn80Pb20)
Published :
2010
Test Condition :
300V, 9A, 1k Ω, 5V
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
400V
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Td (on/off) @ 25°C :
-/5μs
Vce(on) (Max) @ Vge, Ic :
1.9V @ 4.5V, 20A
Datasheets
NGB8202NT4
Introducing Transistors - IGBTs - Single onsemi NGB8202NT4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:NGB8202, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, NGB8202NT4 pinout, NGB8202NT4 datasheet PDF, NGB8202NT4 amp .Beyond Transistors - IGBTs - Single onsemi NGB8202NT4 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NGB8202NT4


NGB8202NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGB8202NT4 Description


For usage in inductive coil drivers, the NGB8202NT4 Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry with ESD and Overvoltage clamping protection. Ignition, Direct Fuel Injection, and other applications requiring high voltage and high current switching are among the most common.



NGB8202NT4 Features


  • Low Saturation Voltage

  • Pb?Free Package is Available

  • Gate?Emitter ESD Protection

  • High Pulsed Current Capability

  • Integrated ESD Diode Protection

  • Ideal for Coil?on?Plug and Driver?on?Coil Applications

  • Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)

  • Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices



NGB8202NT4 Applications


  • Ignition,

  • Ignition Systems

  • Direct Fuel Injection

  • Inductive coil drivers applications

  • Wherever high voltage and high current switching is required


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