NGB8202NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Max Power Dissipation :

150W

Turn On Time :

6500 ns

Collector Emitter Breakdown Voltage :

440V

Input Type :

Logic

RoHS Status :

Non-RoHS Compliant

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn80Pb20)

Collector Emitter Voltage (VCEO) :

1.9V

Mount :

Surface Mount

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Published :

2010

Power Dissipation :

150W

Fall Time-Max (tf) :

14000ns

Number of Terminations :

2

Current Rating :

20A

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Test Condition :

300V, 9A, 1k Ω, 5V

Terminal Form :

Gull wing

Voltage - Rated DC :

400V

Current - Collector Pulsed (Icm) :

50A

Base Part Number :

NGB8202

ECCN Code :

EAR99

Gate-Emitter Thr Voltage-Max :

2.1V

Transistor Application :

AUTOMOTIVE IGNITION

Max Collector Current :

20A

Polarity/Channel Type :

N-Channel

Rise Time-Max :

8000ns

Gate-Emitter Voltage-Max :

15V

Turn Off Time-Nom (toff) :

18500 ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

240

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Td (on/off) @ 25°C :

-/5μs

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e0