NGB8202NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Base Part Number :

NGB8202

Gate-Emitter Voltage-Max :

15V

Max Power Dissipation :

150W

Turn On Time :

6500 ns

Pin Count :

3

Transistor Application :

AUTOMOTIVE IGNITION

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

1.9V

Gate-Emitter Thr Voltage-Max :

2.1V

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Terminal Form :

Gull wing

Input Type :

Logic

Fall Time-Max (tf) :

14000ns

Terminal Position :

Single

Number of Pins :

3

Rise Time-Max :

8000ns

Qualification Status :

Not Qualified

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

240

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

No

Turn Off Time-Nom (toff) :

18500 ns

Collector Emitter Breakdown Voltage :

440V

Number of Elements :

1

Current Rating :

20A

Power Dissipation :

150W

Current - Collector Pulsed (Icm) :

50A

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Collector Current :

20A

Terminal Finish :

Tin/Lead (Sn80Pb20)

Published :

2010

Test Condition :

300V, 9A, 1k Ω, 5V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

400V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Td (on/off) @ 25°C :

-/5μs

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A