NGB8202NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e0

Turn Off Time-Nom (toff) :

18500 ns

Number of Pins :

3

Published :

2010

Base Part Number :

NGB8202

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Fall Time-Max (tf) :

14000ns

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Td (on/off) @ 25°C :

-/5μs

ECCN Code :

EAR99

Turn On Time :

6500 ns

Case Connection :

COLLECTOR

Test Condition :

300V, 9A, 1k Ω, 5V

Transistor Application :

AUTOMOTIVE IGNITION

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn80Pb20)

Current Rating :

20A

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

15V

Power Dissipation :

150W

Mount :

Surface Mount

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

1.9V

Gate-Emitter Thr Voltage-Max :

2.1V

Pin Count :

3

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Max Power Dissipation :

150W

Peak Reflow Temperature (Cel) :

240

Collector Emitter Breakdown Voltage :

440V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Input Type :

Logic

Pbfree Code :

No

Transistor Element Material :

SILICON

Max Collector Current :

20A

Voltage - Rated DC :

400V

Rise Time-Max :

8000ns

Polarity/Channel Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Current - Collector Pulsed (Icm) :

50A