NGB8202NT4G
- Mfr.Part #
- NGB8202NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 440V 20A 150W D2PAK
- Stock
- 12,516
- In Stock :
- 12,516
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 150W
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Td (on/off) @ 25°C :
- -/5μs
- Current - Collector Pulsed (Icm) :
- 50A
- Test Condition :
- 300V, 9A, 1k Ω, 5V
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 440V
- Peak Reflow Temperature (Cel) :
- 260
- Turn Off Time-Nom (toff) :
- 18500 ns
- Transistor Application :
- POWER CONTROL
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Published :
- 2005
- Current Rating :
- 20A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 440V
- Turn On Time :
- 6500 ns
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Rise Time-Max :
- 8000ns
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 4.5V, 20A
- Max Collector Current :
- 20A
- Gate-Emitter Thr Voltage-Max :
- 2.1V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 440V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 150W
- Voltage - Rated DC :
- 400V
- Base Part Number :
- NGB8202
- Gate-Emitter Voltage-Max :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Fall Time-Max (tf) :
- 14000ns
- Input Type :
- Logic
- Datasheets
- NGB8202NT4G

NGB8202NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGB8202NT4G Description
NGB8202NT4G is a 400v N?Channel Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8202NT4G features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGB8202NT4G is in the D2PAK package with 150 power dissipation.
NGB8202NT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Pb?Free Devices
NGB8202NT4G Applications
Ignition Systems
Automotive
Hybrid, electric & powertrain systems
Industrial
Aerospace & Defense
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