NGB8202NT4G

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

150W

Polarity/Channel Type :

N-Channel

Packaging :

Tape and Reel (TR)

Td (on/off) @ 25°C :

-/5μs

Current - Collector Pulsed (Icm) :

50A

Test Condition :

300V, 9A, 1k Ω, 5V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Max Breakdown Voltage :

440V

Peak Reflow Temperature (Cel) :

260

Turn Off Time-Nom (toff) :

18500 ns

Transistor Application :

POWER CONTROL

Number of Terminations :

2

Case Connection :

COLLECTOR

Published :

2005

Current Rating :

20A

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

440V

Turn On Time :

6500 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Pbfree Code :

yes

Rise Time-Max :

8000ns

Element Configuration :

Single

Number of Elements :

1

Mount :

Surface Mount

Radiation Hardening :

No

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Pin Count :

3

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Max Collector Current :

20A

Gate-Emitter Thr Voltage-Max :

2.1V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

440V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

150W

Voltage - Rated DC :

400V

Base Part Number :

NGB8202

Gate-Emitter Voltage-Max :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Fall Time-Max (tf) :

14000ns

Input Type :

Logic