NGB8204NT4G

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Transistor Application :

AUTOMOTIVE IGNITION

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Part Number :

NGB8204

Number of Elements :

1

Published :

2006

Number of Pins :

3

Pbfree Code :

yes

Pin Count :

3

Max Power Dissipation :

115W

Collector Emitter Voltage (VCEO) :

430V

Number of Terminations :

2

Gate-Emitter Voltage-Max :

18V

Transistor Element Material :

SILICON

Input Type :

Logic

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Gate-Emitter Thr Voltage-Max :

1.9V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 4V, 15A

Voltage - Rated DC :

400V

Current Rating :

18A

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Fall Time-Max (tf) :

15000ns

Turn On Time :

5200 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Current - Collector Pulsed (Icm) :

50A

Collector Emitter Breakdown Voltage :

430V

Turn Off Time-Nom (toff) :

13000 ns

Rise Time-Max :

7000ns

Max Collector Current :

18A

Operating Temperature :

-55°C~175°C TJ

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Mount :

Surface Mount

Element Configuration :

Single

Power Dissipation :

115W

Polarity/Channel Type :

N-Channel