NGB8204NT4
- Mfr.Part #
- NGB8204NT4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 430V 18A 115W D2PAK
- Stock
- 37,891
- In Stock :
- 37,891
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Lead Free :
- Contains Lead
- Current Rating :
- 18A
- Transistor Application :
- AUTOMOTIVE IGNITION
- Turn On Time :
- 5200 ns
- Number of Elements :
- 1
- Published :
- 2006
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Voltage - Rated DC :
- 400V
- Power Dissipation :
- 115W
- Gate-Emitter Voltage-Max :
- 18V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 4V, 15A
- JESD-609 Code :
- e0
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- Max Collector Current :
- 18A
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 13000 ns
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Pin Count :
- 3
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Max Power Dissipation :
- 115W
- Current - Collector Pulsed (Icm) :
- 50A
- Number of Pins :
- 3
- Input Type :
- Logic
- Gate-Emitter Thr Voltage-Max :
- 1.9V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Breakdown Voltage :
- 430V
- Base Part Number :
- NGB8204
- Fall Time-Max (tf) :
- 15000ns
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time-Max :
- 7000ns
- Peak Reflow Temperature (Cel) :
- 235
- Datasheets
- NGB8204NT4

NGB8204NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGB8204NT4 Description
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGB8204NT4 Features
? Protection for integrated ESD diodes
? Unclamped Inductive Switching (UIS) Energy Per Area Increases with New Design
? Interface Power Loads to Logic or Microprocessor Devices with Low Threshold Voltage
? Reduced Saturation Voltage
? Ability to Handle High Pulsed Current
NGB8204NT4 Applications
Drives
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