NGB8204NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

2.5V @ 4V, 15A

Power Dissipation :

115W

Collector Emitter Voltage (VCEO) :

2.5V

Gate-Emitter Thr Voltage-Max :

1.9V

JESD-609 Code :

e0

Terminal Position :

Single

Pin Count :

3

Max Collector Current :

18A

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

400V

Reach Compliance Code :

not_compliant

Fall Time-Max (tf) :

15000ns

Rise Time-Max :

7000ns

Base Part Number :

NGB8204

Qualification Status :

Not Qualified

Published :

2006

Pbfree Code :

No

Terminal Form :

Gull wing

Current Rating :

18A

Gate-Emitter Voltage-Max :

18V

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Input Type :

Logic

Turn Off Time-Nom (toff) :

13000 ns

Current - Collector Pulsed (Icm) :

50A

Transistor Element Material :

SILICON

Max Power Dissipation :

115W

Terminal Finish :

Tin/Lead (Sn80Pb20)

Collector Emitter Breakdown Voltage :

430V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

235

Turn On Time :

5200 ns

Number of Pins :

3

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

AUTOMOTIVE IGNITION