NGB8204NT4

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Mfr.Part #
NGB8204NT4
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 430V 18A 115W D2PAK
Stock
37,891
In Stock :
37,891

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Pbfree Code :
No
RoHS Status :
Non-RoHS Compliant
Case Connection :
COLLECTOR
Lead Free :
Contains Lead
Current Rating :
18A
Transistor Application :
AUTOMOTIVE IGNITION
Turn On Time :
5200 ns
Number of Elements :
1
Published :
2006
Terminal Finish :
Tin/Lead (Sn80Pb20)
Voltage - Rated DC :
400V
Power Dissipation :
115W
Gate-Emitter Voltage-Max :
18V
Vce(on) (Max) @ Vge, Ic :
2.5V @ 4V, 15A
JESD-609 Code :
e0
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Form :
Gull wing
Max Collector Current :
18A
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Turn Off Time-Nom (toff) :
13000 ns
Number of Terminations :
2
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Pin Count :
3
Terminal Position :
Single
Collector Emitter Voltage (VCEO) :
2.5V
Max Power Dissipation :
115W
Current - Collector Pulsed (Icm) :
50A
Number of Pins :
3
Input Type :
Logic
Gate-Emitter Thr Voltage-Max :
1.9V
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
N-Channel
Collector Emitter Breakdown Voltage :
430V
Base Part Number :
NGB8204
Fall Time-Max (tf) :
15000ns
Reach Compliance Code :
not_compliant
Operating Temperature :
-55°C~175°C TJ
Rise Time-Max :
7000ns
Peak Reflow Temperature (Cel) :
235
Datasheets
NGB8204NT4
Introducing Transistors - IGBTs - Single onsemi NGB8204NT4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Base Part Number:NGB8204, Operating Temperature:-55°C~175°C TJ, NGB8204NT4 pinout, NGB8204NT4 datasheet PDF, NGB8204NT4 amp .Beyond Transistors - IGBTs - Single onsemi NGB8204NT4 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NGB8204NT4


NGB8204NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGB8204NT4 Description


For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.



NGB8204NT4 Features


? Protection for integrated ESD diodes


? Unclamped Inductive Switching (UIS) Energy Per Area Increases with New Design


? Interface Power Loads to Logic or Microprocessor Devices with Low Threshold Voltage


? Reduced Saturation Voltage


? Ability to Handle High Pulsed Current



NGB8204NT4 Applications


Drives


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