MPSH17

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

350mW

Packaging :

Bulk

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

15V

Noise Figure (dB Typ @ f) :

6dB @ 200MHz

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

3V

Mounting Type :

Through Hole

Pbfree Code :

yes

Polarity/Channel Type :

NPN

hFE Min :

25

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 5mA 10V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MPSH17

Power Dissipation :

350mW

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Current Rating :

5mA

Qualification Status :

Not Qualified

Frequency :

800MHz

Transition Frequency :

800MHz

ECCN Code :

EAR99

Mount :

Through Hole

Published :

2006

Collector Emitter Saturation Voltage :

500mV

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

15V

Collector Base Voltage (VCBO) :

20V

Gain Bandwidth Product :

800MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Number of Pins :

3

Collector Emitter Breakdown Voltage :

15V

Gain :

24dB

Number of Terminations :

3

Number of Elements :

1

Collector-Base Capacitance-Max :

0.9pF

Terminal Position :

BOTTOM