MPSH10RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

Number of Elements :

1

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

hFE Min :

60

Collector Emitter Voltage (VCEO) :

25V

DC Current Gain-Min (hFE) :

60

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Number of Terminations :

3

Collector-Base Capacitance-Max :

0.7pF

Max Operating Temperature :

150°C

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

3V

HTS Code :

8541.21.00.75

Published :

1996

Surface Mount :

No

Current Rating :

4mA

Min Operating Temperature :

-55°C

Max Power Dissipation :

350mW

Number of Pins :

3

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Gain Bandwidth Product :

650MHz

Collector Base Voltage (VCBO) :

30V

Terminal Form :

THROUGH-HOLE

Transition Frequency :

650MHz

Package / Case :

TO-92-3

Voltage - Rated DC :

25V

Collector Emitter Breakdown Voltage :

25V

Collector Emitter Saturation Voltage :

500mV

Polarity :

NPN

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

240

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Collector Current-Max (IC) :

0.1A