MPSH10RLRPG

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Mfr.Part #
MPSH10RLRPG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
RF TRANS NPN 25V 650MHZ TO92-3
Stock
32,709
In Stock :
32,709

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - RF
Collector Emitter Breakdown Voltage :
25V
Published :
2007
Emitter Base Voltage (VEBO) :
3V
ECCN Code :
EAR99
Mounting Type :
Through Hole
Transistor Application :
AMPLIFIER
Current Rating :
4mA
Lead Free :
Lead Free
Base Part Number :
MPSH10
RoHS Status :
RoHS Compliant
Transition Frequency :
650MHz
Collector Base Voltage (VCBO) :
30V
Gain Bandwidth Product :
650MHz
hFE Min :
60
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
25V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 23 hours ago)
Voltage - Rated DC :
25V
Transistor Element Material :
SILICON
Surface Mount :
No
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
Max Power Dissipation :
350W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Polarity/Channel Type :
NPN
Element Configuration :
Single
JESD-609 Code :
e1
Terminal Position :
BOTTOM
Power - Max :
350mW
Number of Terminations :
3
Packaging :
Tape and Box (TB)
Frequency :
650MHz
Collector Emitter Saturation Voltage :
500mV
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pin Count :
3
Pbfree Code :
yes
Transistor Type :
NPN
Collector-Base Capacitance-Max :
0.7pF
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Power Dissipation :
350W
Introducing Transistors - Bipolar (BJT) - RF onsemi MPSH10RLRPG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:MPSH10, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), MPSH10RLRPG pinout, MPSH10RLRPG datasheet PDF, MPSH10RLRPG amp .Beyond Transistors - Bipolar (BJT) - RF onsemi MPSH10RLRPG ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSH10RLRPG


MPSH10RLRPG datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

The ON Semiconductor MPSH10RLRPG is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum collector-emitter voltage of 25V and a maximum frequency of 650MHz. It is housed in a TO-92-3 package, which is a small, three-pin package that is suitable for surface mounting.

Features of the MPSH10RLRPG include a low noise figure, high gain, and high power output. It also has a low collector-emitter saturation voltage and a low collector-base capacitance.

Applications of the MPSH10RLRPG include RF amplifiers, oscillators, and mixers. It is suitable for use in a variety of RF applications, such as cellular phones, wireless LANs, and satellite communications. It can also be used in automotive and industrial applications.
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