MPSH10RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

25V

Published :

2007

Emitter Base Voltage (VEBO) :

3V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Current Rating :

4mA

Lead Free :

Lead Free

Base Part Number :

MPSH10

RoHS Status :

RoHS Compliant

Transition Frequency :

650MHz

Collector Base Voltage (VCBO) :

30V

Gain Bandwidth Product :

650MHz

hFE Min :

60

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

25V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 23 hours ago)

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Max Power Dissipation :

350W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity/Channel Type :

NPN

Element Configuration :

Single

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Power - Max :

350mW

Number of Terminations :

3

Packaging :

Tape and Box (TB)

Frequency :

650MHz

Collector Emitter Saturation Voltage :

500mV

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Pin Count :

3

Pbfree Code :

yes

Transistor Type :

NPN

Collector-Base Capacitance-Max :

0.7pF

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Power Dissipation :

350W