MMUN2115LT1G
- Mfr.Part #
- MMUN2115LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V SOT23-3
- Stock
- 1,421
- In Stock :
- 1,421
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Height :
- 1.01mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- hFE Min :
- 160
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity :
- PNP
- Resistor - Base (R1) :
- 10 k Ω
- Length :
- 3.04mm
- Pin Count :
- 3
- Width :
- 1.4mm
- Published :
- 2004
- Max Collector Current :
- 100mA
- Min Operating Temperature :
- -55°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 5mA 10V
- Transistor Type :
- PNP - Pre-Biased
- Base Part Number :
- MMUN21**L
- Number of Elements :
- 1
- Operating Supply Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Operating Temperature :
- 150°C
- Max Output Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 500nA
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Power Dissipation :
- 246mW
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -50V
- Max Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 400mW
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Current Rating :
- 100mA
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 250mV
- Datasheets
- MMUN2115LT1G

MMUN2115LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MMUN2115LT1G Description
The ON Semiconductor MMUN2115LT1G is a PNP Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
MMUN2115LT1G Features
-
Halogen-free
-
AEC-Q101 Qualified and PPAP capable
-
Simplifies circuit Design
-
Reduces component count
MMUN2115LT1G Application
-
Automotive
-
Power Management
-
Industrial
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