MMUN2116LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Emitter Base Voltage (VEBO) :

6V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.04mm

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Width :

1.4mm

Max Power Dissipation :

246mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Number of Terminations :

3

Polarity :

PNP

Collector Base Voltage (VCBO) :

50V

Halogen Free :

Halogen Free

Power Dissipation :

246mW

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Element Configuration :

Single

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Published :

2004

Transistor Type :

PNP - Pre-Biased

hFE Min :

160

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Base Part Number :

MMUN21**L

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR

Voltage - Rated DC :

-50V

Resistor - Base (R1) :

4.7 k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Current Rating :

-100mA

Contact Plating :

Tin

Height :

1.01mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Max Frequency :

10kHz

Continuous Collector Current :

100mA