MMUN2111LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Contact Plating :

Tin

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10 k Ω

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

3

Max Output Current :

100mA

Height :

940μm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Max Collector Current :

100mA

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Width :

1.3mm

Transistor Application :

SWITCHING

Published :

2003

Min Operating Temperature :

-55°C

Max Power Dissipation :

246mW

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Pin Count :

3

HTS Code :

8541.21.00.95

hFE Min :

35

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

250mV

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

4 Weeks

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Base Part Number :

MMUN21**L

Current Rating :

-100mA

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

10 k Ω

Operating Supply Voltage :

50V

Halogen Free :

Halogen Free

Voltage - Rated DC :

-50V

REACH SVHC :

No SVHC

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Power Dissipation :

246mW

Max Operating Temperature :

150°C

Transistor Type :

PNP - Pre-Biased