MMUN2111LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Max Output Current :

100mA

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Length :

2.9mm

Element Configuration :

Single

Collector Emitter Saturation Voltage :

250mV

Halogen Free :

Halogen Free

Pin Count :

3

Lead Free :

Lead Free

Surface Mount :

yes

Polarity :

PNP

JESD-609 Code :

e3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Resistor - Base (R1) :

10 k Ω

Pbfree Code :

yes

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Base Part Number :

MMUN21**L

Operating Supply Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

ECCN Code :

EAR99

Height :

940μm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-50V

Published :

2003

Transistor Type :

PNP - Pre-Biased

REACH SVHC :

No SVHC

Continuous Collector Current :

100mA

Power Dissipation :

246mW

Current Rating :

-100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

HTS Code :

8541.21.00.95

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10 k Ω

Width :

1.3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Max Operating Temperature :

150°C

Max Power Dissipation :

246mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

35