MMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Contact Plating :

Tin

Base Part Number :

MMUN21**L

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Resistor - Base (R1) :

10 k Ω

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Radiation Hardening :

No

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Max Collector Current :

100mA

Number of Elements :

1

Voltage - Rated DC :

-50V

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Pbfree Code :

yes

Number of Pins :

3

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Pin Count :

3

Published :

2007

Max Power Dissipation :

246mW

Continuous Collector Current :

100mA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Max Breakdown Voltage :

50V

hFE Min :

35

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Power Dissipation :

246mW

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Lead Free :

Lead Free

Halogen Free :

Halogen Free