MMBTH10LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

225mW

Termination :

SMD/SMT

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Terminal Position :

Dual

Length :

3.04mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

25V

Max Junction Temperature (Tj) :

150°C

Current Rating :

4mA

Transistor Type :

NPN

Voltage - Rated DC :

25V

Number of Terminations :

3

Base Part Number :

MMBTH10

Width :

1.4mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

25V

Max Collector Current :

100nA

Contact Plating :

Tin

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

30V

Transition Frequency :

650MHz

Collector-Base Capacitance-Max :

0.7pF

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2001

Emitter Base Voltage (VEBO) :

3V

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

25V

Packaging :

Tape and Reel (TR)

hFE Min :

60

Height :

1.11mm

Factory Lead Time :

8 Weeks

Gain Bandwidth Product :

650MHz

Power Dissipation :

225mW

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Frequency :

650MHz

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Weight :

4.535924g

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Pin Count :

3

Number of Pins :

3