MMBT100

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

4.5pF

Collector Base Voltage (VCBO) :

75V

Mount :

Surface Mount

hFE Min :

100

Transition Frequency :

250MHz

Transistor Element Material :

SILICON

Published :

2008

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

400mV

Max Breakdown Voltage :

45V

Terminal Form :

Gull wing

Base Part Number :

MMBT100

Collector Emitter Voltage (VCEO) :

45V

Frequency :

250MHz

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Height :

970μm

Emitter Base Voltage (VEBO) :

6V

Voltage - Rated DC :

45V

Number of Terminations :

3

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Max Power Dissipation :

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Number of Elements :

1

Element Configuration :

Single

Gain Bandwidth Product :

250MHz

JESD-609 Code :

e3

Radiation Hardening :

No

Length :

2.9mm

Factory Lead Time :

39 Weeks

Weight :

30mg

VCEsat-Max :

0.2 V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

45V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50nA

Power Dissipation :

350mW

Max Collector Current :

500mA

Current Rating :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3