MMBT100

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Base Capacitance-Max :

4.5pF

VCEsat-Max :

0.2 V

Width :

1.3mm

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Height :

970μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Max Breakdown Voltage :

45V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

50nA

hFE Min :

100

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

350mW

Max Collector Current :

500mA

Base Part Number :

MMBT100

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

75V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Gain Bandwidth Product :

250MHz

JESD-609 Code :

e3

Terminal Form :

Gull wing

Weight :

30mg

Factory Lead Time :

39 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Mount :

Surface Mount

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Frequency :

250MHz

Voltage - Rated DC :

45V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Length :

2.9mm

Current Rating :

500mA

Collector Emitter Saturation Voltage :

400mV

Collector Emitter Breakdown Voltage :

45V

Power Dissipation :

350mW

ECCN Code :

EAR99

Number of Pins :

3

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Polarity/Channel Type :

NPN

Published :

2008

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Emitter Base Voltage (VEBO) :

6V

Lead Free :

Lead Free