MMBT100

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Number of Elements :

1

JESD-609 Code :

e3

Collector-Base Capacitance-Max :

4.5pF

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

45V

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Width :

1.3mm

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

400mV

Current Rating :

500mA

Element Configuration :

Single

Max Collector Current :

500mA

REACH SVHC :

No SVHC

Gain Bandwidth Product :

250MHz

Polarity/Channel Type :

NPN

VCEsat-Max :

0.2 V

Published :

2008

Current - Collector Cutoff (Max) :

50nA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency :

250MHz

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Max Breakdown Voltage :

45V

Transition Frequency :

250MHz

Power Dissipation :

350mW

hFE Min :

100

Pbfree Code :

yes

Transistor Type :

NPN

Base Part Number :

MMBT100

Height :

970μm

Weight :

30mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

75V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Contact Plating :

Tin

Terminal Position :

Dual

Max Power Dissipation :

350mW

Terminal Form :

Gull wing

Factory Lead Time :

39 Weeks

Length :

2.9mm

Voltage - Rated DC :

45V

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

45V