MMBT2222A
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- Mfr.Part #
- MMBT2222A
- Manufacturer
- HY Electronic (Cayman) Limited
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL TRANSISTOR
- Stock
- 180,000
- In Stock ：
- 180,000
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- Manufacturer :
- HY Electronic (Cayman) Limited
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Terminations :
- 3
- Published :
- 2011
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 10 Weeks
- Current - Collector Cutoff (Max) :
- 10nA
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 300MHz
- Turn On Time-Max (ton) :
- 35ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Turn Off Time-Max (toff) :
- 285ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 225mW
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Power - Max :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10mV
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Datasheets
- MMBT2222A
-Limited/MFG_H17C325V0.jpg)
NPN -55°C~150°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222A-G Overview
This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 600mA volts is possible.
MMBT2222A-G Features
the DC current gain for this device is 100 @ 150mA 10mV
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222A-G Applications
There are a lot of Comchip Technology
MMBT2222A-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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